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Rev 4: May 2005
AO4423 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4423 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO4423L (Green Product) is offered in a lead-free package. AO4423 is Pb-free (meets ROHS & Sony 259 specifications). AO4423L is a Green Product ordering option. AO4423 and AO4423L are electrically identical.
Features
VDS (V) = -30V ID = -15A RDS(ON) < 7m (VGS = -20V) RDS(ON) < 8.5m (VGS = -10V) ESD Rating: 6000V HBM
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 25 -15 -12.1 -80 3.1 2 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 26 50 14
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4423, AO4423L
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-20V, ID=-15A Static Drain-Source On-Resistance TJ=125C VGS=-10V, ID=-15A VGS=-6V, ID=-10A Min -30 -100 -500 1 10 -2 -80 -2.7 5.7 7.1 6.8 9.4 43 -0.71 -3.5 7 8.6 8.5 12 -1 -4.2 Typ Max Units V nA A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
Forward Transconductance
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
4632 1034 705 2.5 82 VGS=-10V, VDS=-15V, ID=-15A 16.8 23 18.5 20 55 30 43 38
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=-10V, VDS=-15V, RL=1.0, RGEN=3 IF=-15A, dI/dt=100A/s IF=-15A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. -15 B: Repetitive rating, pulse width limited by junction temperature. -12.8 C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4423, AO4423L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 40 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 12 Normalized On-Resistance VGS=-6V 10 RDS(ON) (m) 1.6 VGS=-10V ID = -15A VGS=-20V ID = -15A VGS=-6V ID = -10A VGS=-4V -5V -10V -6V 20 -ID(A) -4.5V 15 10 25C 5 0 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 125C 30 25 VDS=-5V
-ID (A)
1.4
8
VGS=-10V
1.2
6 VGS=-20V 4 0 5 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 16 ID=-15A 14 12 10 8 6 4 4 8 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
-12.8
-15 1.0E+01
1.0E+00 1.0E-01 125C
RDS(ON) (m)
-IS (A)
125C
1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics
25C
Alpha & Omega Semiconductor, Ltd.
AO4423, AO4423L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 7000 VDS=-15V ID=-15A Capacitance (pF) 6000 Ciss 5000 4000 3000 2000 1000 0 0 10 40 50 60 70 80 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 90 Crss 0 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss
8 -VGS (Volts)
6
4
2
100.0 RDS(ON) limited 10.0 -ID (Amps) 100s 1ms Power (W) 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 10 100 -V (Volts) Figure 9: Maximum DS Forward Biased Safe Operating Area (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 1 1s 10s DC 10s
40
TJ(Max)=150C TA=25C
30
20
10
0 0.001
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.01
-15
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
-12.8
PD Ton Single Pulse
0.1 T
0.01 0.00001
0.0001
0.001 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.

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